| PART |
Description |
Maker |
| MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
TVS BIDIRECT 600W 33V SMB 32M的（4米8/2M × 16）位双操
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| NAND512W3A2AN6E NAND01GW3A2AN6E |
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PDSO48
|
STMICROELECTRONICS
NUMONYX
|
| JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56
4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
| HY27US08121A HY27US16121A HY27SS08121A HY27SS16121 |
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| 28F320C3 |
3 Volt Advanced Boot Block Flash Memory(3 V 高级快速引导块闪速存储器) 32M X 8 FLASH 3V PROM
|
Intel, Corp.
|
| HY27SS08561M-FPCP HY27SS08561M-FCP |
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
|
Hynix Semiconductor, Inc.
|
| HY27US08121B-TIS HY27US16121B-TIP HY27US08121B-FPC |
64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
32M X 16 FLASH 3.3V PROM, 18 ns, PDSO48
64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63
|
HYNIX SEMICONDUCTOR INC
|
| MBM29F033C-90 MBM29F033C-90PTN MBM29F033C-70PTR MB |
32M (4M X 8) BIT 4M X 8 FLASH 5V PROM, 120 ns, PDSO40
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| JS48F4400P0VB00 |
32M X 16 FLASH 1.8V PROM, 88 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56
|
Intel, Corp.
|
|
